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| NTB5411N, NTP5411N Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220 Features * * * * * * * * Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb-Free Devices LED Lighting and LED Backlight Drivers DC-DC Converters DC Motor Drivers Power Supplies Secondary Side Synchronous Rectification Parameter Symbol VDSS VGS VGS ID Value 60 $20 $30 80 61 PD IDM TJ, Tstg IS EAS 166 185 -55 to 175 75 280 W A C A mJ Unit V V V A http://onsemi.com ID MAX (Note 1) 80 A V(BR)DSS 60 V RDS(ON) MAX 10 mW @ 10 V Applications N-Channel D MAXIMUM RATINGS (TJ = 25C Unless otherwise specified) G S 4 4 1 2 3 TO-220AB CASE 221A STYLE 5 3 D2PAK CASE 418B STYLE 2 Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Gate-to-Source Voltage - Nonrepetitive (TP < 10 ms) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C tp = 10 ms 1 Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 75 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 Drain TL 260 C NTP 5411NG AYWW 1 Gate 2 Drain 3 Source 1 Gate THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Steady State (Note 1) Symbol RqJC RqJA Max 0.9 43 Unit C/W NTB 5411NG AYWW 2 Drain 3 Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [1 oz] including traces). G A Y WW = Pb-Free Device = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2009 October, 2009 - Rev. 2 1 Publication Order Number: NTB5411N/D NTB5411N, NTP5411N ELECTRICAL CHARACTERISTICS (TJ = 25C Unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/TJ VDS(on) RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V IS = 37.5 A TJ = 25C TJ = 150C VGS = 10 V, VDD = 48 V, ID = 80 A, RG = 9.1 W VGS = 10 V, VDS = 48 V, ID = 80 A VGS = 10 V, ID = 80 A VGS = 10 V, ID = 40 A, 150C Static Drain-to-Source On-Resistance Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge VDS = 25 V, VGS = 0 V, f = 1 MHz 3365 615 230 92 4.1 19 43 130 nC 4500 pF VGS = 10 V, ID = 40 A VGS = 15 V, ID = 40 A VGS = 0 V VDS = 60 V TJ = 25C TJ = 150C VDS = 0 V, ID = 250 mA 60 54.2 10 100 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Voltage VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA 2.0 3.2 6.6 0.71 0.65 8.4 70 4.0 V mV/C 0.92 V 10 mW S SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage 0.91 0.8 62 43 19 0.15 mC ns 1.1 Vdc 22 122 116 113 ns Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Stored Charge IS = 37.5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTB5411N, NTP5411N TYPICAL PERFORMANCE CURVES 140 120 ID, DRAIN CURRENT (A) 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VGS = 4.5 V 3.2 3.6 4.0 5.5 V 7V 140 120 ID, DRAIN CURRENT (A) 100 80 60 40 20 0 3.0 3.5 TJ = 25C TJ = 125C TJ = -55C VDS w 10 V 10 V 6.5 V TJ = 25C 6V 4.0 4.5 5.0 5.5 6.0 6.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) Figure 2. Transfer Characteristics 15 14 13 12 11 10 9 8 5 6 7 8 9 10 ID = 40 A TJ = 25C 12 11 10 9 8 7 6 5 10 TJ = 25C VGS = 10 V 30 50 70 90 110 130 150 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 10 ID = 40 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 100 TJ = 125C 5 10 15 20 25 30 35 40 45 50 55 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTB5411N, NTP5411N TYPICAL PERFORMANCE CURVES 7000 6000 C, CAPACITANCE (pF) 5000 4000 3000 2000 1000 0 0 Crss 10 20 30 Coss 40 50 60 Ciss VGS = 0 V TJ = 25C 10 9 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 VDS = 48 V ID = 80 A TJ = 25C 70 80 90 Qg, TOTAL GATE CHARGE (nC) Q1 Q2 VGS, GATE-TO-SOURCE VOLTAGE (V) QT VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 70 IS, SOURCE CURRENT (A) 60 50 40 30 20 10 0 0.4 Figure 8. Gate-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C VDD = 48 V ID = 80 A VGS = 10 V tr tf td(off) 100 t, TIME (ns) 10 td(on) 1 1 10 RG, GATE RESISTANCE (W) 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 10 ms dc 10 0 V VGS 10 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1 ms 100 ms 10 ms AVALANCHE ENERGY (mJ) 300 Figure 10. Diode Forward Voltage vs. Current ID = 75 A 250 200 150 100 50 0 25 ID, DRAIN CURRENT (A) 100 1 0.1 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTB5411N, NTP5411N TYPICAL PERFORMANCE CURVES 100 D = 0.5 10 1 0.1 0.01 Surface-Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.2 0.1 0.05 0.02 0.01 r(t), (C/W) t, PULSE TIME (s) Figure 13. Thermal Response ORDERING INFORMATION Device NTP5411NG NTB5411NT4G Package TO-220AB (Pb-Free) D2PAK (Pb-Free) Shipping 50 Units / Rail 800 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTB5411N, NTP5411N PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 C E -B- 4 V W 1 2 3 S A -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 3.504 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS 2X 2X *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTB5411N, NTP5411N PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTB5411N/D |
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